| PART |
Description |
Maker |
| TM020-080-12-20 |
2 ~ 8 GHz 20 dBm Module
|
Transcom, Inc.
|
| TM020-040-18-24 |
2 - 4 GHz 24 dBm Module
|
Transcom, Inc.
|
| TM059-064-09-39 |
5.9 - 6.4 GHz 39 dBm Power Module
|
Transcom, Inc.
|
| TM120-155-07-29 |
12 - 15.5 GHz 29 dBm Power Module
|
Transcom, Inc.
|
| TM053-059-09-39 |
5.3 - 5.9 GHz 39 dBm Power Module
|
Transcom, Inc.
|
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| PE15A1004 |
3 dB NF, 13 dBm, 12 GHz to 18 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
| TIM1414-8-252 |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| HMC7885 HMC7885FH18 |
2 GHz to 6 GHz, 45 dBm Power Amplifier
|
Analog Devices
|
| TA050-062-45-27 |
5 - 6.2 GHz 27.5 dBm Amplifier
|
Transcom, Inc.
|
|
